6H Silicon Carbide (SiC) Square Substrate Wafer for Power High-Frequency

High-Performance 6H-SiC Square Wafer for Power & High-Frequency Applications

1. Product Overview

The 6H Silicon Carbide (SiC) Square Substrate is manufactured from high-purity 6H-SiC single crystal material and precisely processed into a square shape for advanced semiconductor and electronic applications. As a representative material of the third-generation wide bandgap semiconductors, 6H-SiC offers outstanding performance under high temperature, high voltage, high frequency, and high power working conditions.

With excellent thermal conductivity, mechanical strength, chemical stability, and electrical properties, 6H SiC square substrates are widely used in power devices, RF devices, optoelectronics, laser systems, and R&D laboratories. The substrates can be supplied in polished, semi-polished, or unpolished surface conditions with customized sizes and thicknesses.

2. Material Advantages of 6H-SiC

• Ultra-high hardness (Mohs hardness ≈ 9.2)

• High thermal conductivity (~490 W/m·K) for efficient heat dissipation

• Wide bandgap (3.0 eV), suitable for extreme environments

• High breakdown electric field strength

• Excellent chemical resistance and oxidation resistance

• High electron mobility for high-frequency performance

• Stable crystal structure and long service life

3. Typical Specifications (Customizable)

4. Manufacturing Process

1. PVT (Physical Vapor Transport) single crystal growth

2. Orientation and square cutting

3. High-precision grinding and thickness control

4. Single or double side polishing

5. Ultrasonic cleaning and cleanroom packaging

This process ensures high flatness, low surface defects, and excellent electrical consistency.

5. Key Applications

• Power semiconductor devices (MOSFET, SBD, IGBT)

• RF and microwave electronic devices

• High-temperature electronic components

• Laser diodes and optical detectors

• Chip research and prototype development

• University laboratories and semiconductor research institutes

• Microfabrication and MEMS processing

6. Product Advantages

• Genuine 6H-SiC single crystal material

• Square shape for easy handling and device fabrication

• High surface quality with low defect density

• Wide customization range for size, thickness, and resistivity

• Stable performance in extreme environments

• Support for small-batch prototyping and mass production

• 100% inspection before delivery

8. Frequently Asked Questions (FAQ)

Q1: What is the difference between 6H-SiC and 4H-SiC?
A: 4H-SiC is more commonly used in commercial power devices today due to higher electron mobility, while 6H-SiC is preferred in certain RF, microwave, and special optoelectronic applications.

Q2: Can you supply unpolished 6H-SiC square substrates?
A: Yes, we offer polished, lapped, and unpolished surfaces based on customer requirements.

Q3: Do you support small-size square substrates?
A: Yes, square sizes down to 2×2 mm can be customized.

Q4: Are inspection and test reports available?
A: Yes, we can provide dimensional inspection reports, resistivity test data, and surface roughness reports.