Silicon Carbide Wafer 4inch HPSI 350um Widely Used for AI Glasses

Silicon Carbide Wafer 4inch HPSI 350um Widely Used for AI Glasses

Product Introduction:

Silicon carbide (SiC) wafers are next-generation substrate materials used in the fabrication of high-performance semiconductor power devices, such as high-voltage and low-loss power components. SiC wafers possess excellent properties including superior hardness, heat resistance, high thermal conductivity, high breakdown electric field strength, and high electron saturation mobility. These characteristics make them highly suitable for applications in high-temperature, high-voltage, high-frequency, and other extreme environments. Common SiC wafers are available in various sizes (typically from 4 inches to 8 inches) and types (such as P-type, N-type, and semi-insulating). They can be offered in both conductive and semi-insulating forms, and are also available for sale in ingot form.

Product Advantages&Applications:

High Performance: SiC Wafers are with a wide bandgap (>~2.3 eV), approximately three times that of silicon, SiC enables high breakdown voltage and low power loss.

High Thermal Conductivity: Featuring excellent heat conductivity, SiC wafers serve as an ideal heat dissipation material, effectively addressing device overheating issues.

High Breakdown Electric Field: SiC wafers’ breakdown field strength is significantly higher than that of conventional semiconductor materials (such as silicon), making it suitable for high-voltage device fabrication.

High Electron Mobility: The high electron saturation velocity contributes to faster device switching speeds.

Resistance to Harsh Environments: SiC wafers demonstrate outstanding resistance to high temperatures, high voltages, high frequencies, and radiation, making it ideal for use in extreme conditions.

Power Electronics: Used in power devices and inverters to improve energy conversion efficiency.

Microwave and RF Devices: Suitable for manufacturing next-generation electronic equipment.

Extreme Environment Applications: Utilized in aerospace, military, and oil exploration fields.

Strategic Industries: Applied in solar energy, automotive manufacturing, semiconductor lighting, and smart grids to reduce energy consumption and minimize device size.

Product Parameters:

         4 inch diameter Silicon Carbide (SiC) Wafer Specification

Product Pictures:

Related Product Recommendation:

2 3 4 6inch Sic Wafer , Silicon Wafer 4H-N/Semi Type SiC Ingots Industrial

Q&A:

Q: What is a SiC wafer?

A: A SiC wafer — short for silicon carbide wafer — is a type of semiconductor substrate made from silicon carbide (SiC), a compound of silicon and carbon. It’s considered a next-generation material for high-performance and high-efficiency electronic devices, especially power electronics.

Q: What is the difference between SI wafer and SiC wafer?

A: The difference between Si (silicon) wafers and SiC (silicon carbide) wafers is fundamental to why SiC is driving the next generation of high-performance electronics.

Silicon = Mature, low-cost, ideal for standard low-power electronics.

Silicon Carbide (SiC) = Advanced material for high power, high voltage, high temperature, and high efficiency systems.

Q: What are the uses of silicon carbide wafers?

A: silicon carbide (SiC) wafers are revolutionizing modern electronics because of their exceptional electrical, thermal, and mechanical properties. They’re mainly used in high-power, high-frequency, and high-temperature applications — areas where traditional silicon wafers can’t perform efficiently.