Name: Profondément 350 um substrat de semi-conducteur d'INP de monocristal de 2 pouces principal
Uploaded: 2026-03-10CDT21:17:53-05:00
Duration: 5 s
Description: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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Profondément 350 um substrat de semi-conducteur d'INP de monocristal de 2 pouces principal

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February 20, 2023

Mot Clé: Substrat de semi-conducteur

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Les étiquettes:

#gaufrette de semi-conducteur #substrat de gaufrette #substrat de gasb

Vidéo description:

Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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