Arséniure InAs d'indium

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February 15, 2023
Catégorie Connexion: Substrat de semi-conducteur
Bref: Discover the high-performance Indium Arsenide (InAs) Single Crystal Monocrystal Semiconductor Substrate, ideal for infrared detectors, quantum dot technology, and high-speed electronics. Learn about its unique properties and applications in modern semiconductor and optoelectronic fields.
Caractéristiques Du Produit Connexes:
  • Indium Arsenide (InAs) substrates are perfect for high-performance infrared detectors in mid and long-wavelength ranges.
  • Used in quantum dot technology for advanced optoelectronic devices like lasers and solar cells.
  • Excellent electron mobility makes InAs suitable for high-speed electronics and telecommunications.
  • Popular material for optoelectronic devices such as lasers and photodetectors due to its direct bandgap.
  • Superior thermoelectric properties enable use in thermoelectric generators and coolers.
  • Grown using liquid-sealed straight-drawing technology (LEC) for stable electrical performance.
  • Precise crystal orientation with deviation of only ±0.5° using X-ray directional instruments.
  • Chemically mechanically polished (CMP) for surface roughness <0.5nm, ready for immediate use.
FAQ:
  • Are you a trading company or manufacturer?
    We are a trading company with a sapphire manufacturer as our supplier, specializing in semiconductor material wafers for various applications.
  • Combien de temps dure votre délai de livraison ?
    La livraison prend généralement 5 à 10 jours si les marchandises sont en stock, ou 15 à 20 jours si elles doivent être produites, selon la quantité.
  • Do you provide samples? Are they free or extra?
    Yes, we offer free samples, but the customer is responsible for the freight costs.
  • What are your payment terms?
    For payments <=1000USD, 100% advance payment is required. For payments >=1000USD, 50% T/T in advance and the balance before shipment.