Silicon Carbide Wafer 4inch HPSI 350um Widely Used for AR Glasses

Silicon Carbide Wafer 4inch HPSI 350um Widely Used for AR Glasses

Product Introduction:

     Semi-insulating silicon carbide (SiC) wafers are substrates used for producing high-power and high-frequency electronic devices. SiC wafers are semiconductor materials formed by combining silicon and carbon. The electrical resistivity of semi-insulating SiC wafers lies between that of conductors and insulators, whereas ordinary silicon wafers are conductive. They are mainly used in power devices, electronic and optoelectronic applications, and wireless infrastructure. Driven by the surging demand for power electronics, growing attention to energy efficiency, the transition toward clean energy solutions, and substantial public and private investment in SiC manufacturing capacity, the market for semi-insulating SiC wafers is expanding. High-purity semi-insulating silicon carbide (SiC) wafers are key materials used in the manufacture of high-performance radio frequency (RF) devices. They hold significant value in fields such as 5G communications, radar detection, and military applications. With electrical resistivity between that of conductors and insulators, these wafers can effectively support the operation of high-power and high-frequency devices.

Product Advantages&Applications:

High Performance: SiC Wafers are with a wide bandgap (>~2.3 eV), approximately three times that of silicon, SiC enables high breakdown voltage and low power loss.

High Thermal Conductivity: Featuring excellent heat conductivity, SiC wafers serve as an ideal heat dissipation material, effectively addressing device overheating issues.

High Breakdown Electric Field: SiC wafers’ breakdown field strength is significantly higher than that of conventional semiconductor materials (such as silicon), making it suitable for high-voltage device fabrication.

 High Electron Mobility: The high electron saturation velocity contributes to faster device switching speeds.

 Resistance to Harsh Environments: SiC wafers demonstrate outstanding resistance to high temperatures, high voltages, high frequencies, and radiation, making it ideal for use in extreme conditions.

Power Electronics: Used in power devices and inverters to improve energy conversion efficiency.

Microwave and RF Devices: Suitable for manufacturing next-generation electronic equipment.

Extreme Environment Applications: Utilized in aerospace, military, and oil exploration fields.

Strategic Industries: Applied in solar energy, automotive manufacturing, semiconductor lighting, and smart grids to reduce energy consumption and minimize device size.

Product Parameters:

4 inch diameter Silicon Carbide (SiC) Wafer Specification

Product Pictures:

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Q&A:

Q: What is a SiC wafer?

A: A SiC wafer — short for silicon carbide wafer — is a type of semiconductor substrate made from silicon carbide (SiC), a compound of silicon and carbon. It’s considered a next-generation material for high-performance and high-efficiency electronic devices, especially power electronics.

Q: What is the difference between SI wafer and SiC wafer?

A: The difference between Si (silicon) wafers and SiC (silicon carbide) wafers is fundamental to why SiC is driving the next generation of high-performance electronics.

Silicon = Mature, low-cost, ideal for standard low-power electronics.

Silicon Carbide (SiC) = Advanced material for high power, high voltage, high temperature, and high efficiency systems.

Q: What are the uses of silicon carbide wafers?

A: silicon carbide (SiC) wafers are revolutionizing modern electronics because of their exceptional electrical, thermal, and mechanical properties. They’re mainly used in high-power, high-frequency, and high-temperature applications — areas where traditional silicon wafers can’t perform efficiently.