Name: Plaquettes épitaxiales 4H-SiC pour MOSFET à ultra-haute tension (100 ‰ 500 μm, 6 pouces)
Uploaded: 2026-03-09CDT00:47:59-05:00
Duration: 4 s
Description: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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Plaquettes épitaxiales 4H-SiC pour MOSFET à ultra-haute tension (100 ‰ 500 μm, 6 pouces)

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September 02, 2025

Mot Clé: Gaufrette de carbure de silicium

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#substrat de carbure de silicium #sic gaufrette #silicium sur des gaufrettes de saphir

Vidéo description:

Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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